CVE-2021-42114

CVE-2021-42114 is a critical-severity vulnerability in Samsung Ddr4 Sdram Firmware with a CVSS 3.x base score of 9.0. It is not currently listed as actively exploited by CISA, and its EPSS exploit-prediction score is low. The underlying weakness is classified as CWE-20.

Key facts

Description

Modern DRAM devices (PC-DDR4, LPDDR4X) are affected by a vulnerability in their internal Target Row Refresh (TRR) mitigation against Rowhammer attacks. Novel non-uniform Rowhammer access patterns, consisting of aggressors with different frequencies, phases, and amplitudes allow triggering bit flips on affected memory modules using our Blacksmith fuzzer. The patterns generated by Blacksmith were able to trigger bitflips on all 40 PC-DDR4 DRAM devices in our test pool, which cover the three major DRAM manufacturers: Samsung, SK Hynix, and Micron. This means that, even when chips advertised as Rowhammer-free are used, attackers may still be able to exploit Rowhammer. For example, this enables privilege-escalation attacks against the kernel or binaries such as the sudo binary, and also triggering bit flips in RSA-2048 keys (e.g., SSH keys) to gain cross-tenant virtual-machine access. We can confirm that DRAM devices acquired in July 2020 with DRAM chips from all three major DRAM vendors (Samsung, SK Hynix, Micron) are affected by this vulnerability. For more details, please refer to our publication.

Frequently asked questions

What is CVE-2021-42114?
Modern DRAM devices (PC-DDR4, LPDDR4X) are affected by a vulnerability in their internal Target Row Refresh (TRR) mitigation against Rowhammer attacks. Novel non-uniform Rowhammer access patterns, consisting of aggressors with different frequencies, phases, and amplitudes allow triggering bit flips on affected memory modules using our Blacksmith fuzzer. The patterns generated by Blacksmith were able to trigger bitflips on all 40 PC-DDR4 DRAM devices in our test pool, which cover the three major DRAM manufacturers: Samsung, SK Hynix, and Micron. This means that, even when chips advertised as Rowhammer-free are used, attackers may still be able to exploit Rowhammer. For example, this enables privilege-escalation attacks against the kernel or binaries such as the sudo binary, and also triggering bit flips in RSA-2048 keys (e.g., SSH keys) to gain cross-tenant virtual-machine access. We can confirm that DRAM devices acquired in July 2020 with DRAM chips from all three major DRAM vendors (Samsung, SK Hynix, Micron) are affected by this vulnerability. For more details, please refer to our publication.
How severe is CVE-2021-42114?
CVE-2021-42114 has a CVSS 3.x base score of 9.0, rated critical severity. It is exploitable over network with high attack complexity, requires no privileges and no user interaction. Impact on confidentiality is high, integrity high, and availability high.
Is CVE-2021-42114 being actively exploited?
It is not currently listed in CISA's KEV catalog. Its EPSS exploit-prediction score is 3% (85th percentile), an estimate of the probability of exploitation in the next 30 days.
What products are affected by CVE-2021-42114?
CVE-2021-42114 primarily affects Samsung Ddr4 Sdram Firmware. In total, 6 product configurations (CPEs) are listed as vulnerable; see the affected-products list for the exact versions.
How do I fix CVE-2021-42114?
Review the linked vendor and NVD advisories for patched versions and mitigations, then upgrade or apply the recommended workaround. Given its critical severity, prioritise patching exposed systems.
When was CVE-2021-42114 published?
CVE-2021-42114 was published on 2021-11-16 and last updated on 2026-06-17.

References

Affected products (6)

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